Reliability of Power Semiconductor Modules: A State-of-the-Art Review

Abstract

Power electronic converters are essential in modern energy systems, facilitating efficient energy conversion in applications such as renewable energy, transportation, and industry. Power semiconductors are crucial to ensure reliability within these converters, often representing the weakest link in performance and durability. Failures in these devices can lead to costly downtime, decreased performance, and safety risks in demanding applications. This article provides a comprehensive analysis of the reliability challenges and solutions associated with power semiconductors, specifically focusing on silicon (Si) IGBTs and silicon carbide (SiC) MOSFETs. It examines key failure mechanisms, such as gate-oxide degradation and thermo-mechanical aging, at both the chip and package levels. Additionally, the article offers a market-oriented overview of standard power semiconductor packages and insights into current manufacturing trends and their implications for reliability. It also explores Active Thermal Control (ATC) techniques, such as gate voltage modulation, which can be implemented at the user level to mitigate stress-related failures. The findings intend to inform future researchers and developers, ensuring that power electronics systems can meet the increasing demand for reliable, efficient, and safe energy solutions.

Keywords

• Power semiconductors
• reliability
• Si-IGBT
• SiC-MOSFET
• chip-level reliability
• package-level reliability