A sequential two-step near-infrared quantum splitting in Ho3+ singly doped NaYF4
D. C. Yu,
X. Y. Huang,
S. Ye,
Q. Y. Zhang,
J. Wang
Affiliations
D. C. Yu
State Key Laboratory of Luminescent Materials and Devices, and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641, P. R. China
X. Y. Huang
State Key Laboratory of Luminescent Materials and Devices, and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641, P. R. China
S. Ye
State Key Laboratory of Luminescent Materials and Devices, and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641, P. R. China
Q. Y. Zhang
State Key Laboratory of Luminescent Materials and Devices, and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641, P. R. China
J. Wang
State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275, P. R. China
We demonstrated an efficient sequential two-step near-infrared (NIR) quantum splitting (QS) in a Ho3+ singly doped β-NaYF4. An incident high-energy ultraviolet (UV)-to-visible photon in the wavelength range of 300−560 nm, which enables the Ho3+:5F4,5S2 states excited, could be efficiently split into two NIR photons at 1015 and 1180 nm. Underlying mechanisms for the sequential two-step NIR-QS process are analyzed in terms of the diffuse reflection spectrum, static and dynamic photoemission spectra and monitored excitation spectra. Internal quantum yield is obtained up to 110% on the basis of experimental and theoretical calculation results.
