In this work, we report on demonstrating lateral β-Ga2O3 Schottky barrier diodes (SBDs) fabricated on Fe-GaN/sapphire (0001) substrates by using the non-vacuum, low-cost mist chemical vapor deposition (mist CVD) method for the first time. The x-ray diffraction scanning pattern identifies that β-Ga2O3 layers are grown with (−201) planes parallel to the (0001) plane of the GaN template, and the transmission electron microscopy shows that the β-Ga2O3 lattice is regularly and neatly arranged, indicating good crystal quality. β-Ga2O3 based SBDs with 4 and 20 µm anode–cathode lengths (LAC) exhibit the specific on-resistance (Ron,sp) of 1.58 and 39.8 Ω cm2 and breakdown voltage (Vbr) of 580 and 2400 V, respectively. The present results show the great potential of the non-vacuum and cost-effective mist CVD method as the epitaxial growth technique employed in β-Ga2O3 devices.
