Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
Mohan Liu
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
Kunfeng Zhu
Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
Guohua Shui
Science and Technology on Analog Integrated Circuit Laboratory, Chongqing, China
Qiwen Zheng
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
Jiangwei Cui
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
Wu Lu
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
Yudong Li
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
Qi Guo
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based high-electron-mobility transistors (HEMTs) with a p-type gate. Combined with experimental frequency-dependent conductance ( $\text{G}_{\mathrm {p}}/\omega)$ analyses and TCAD simulations, it has been demonstrated that the negative shifts in both $\text{I}_{\mathrm {d}}$ - $\text{V}_{\mathrm {gs}}$ and $\text{V}_{\mathrm {th}}$ are primarily due to the formation of donor-like traps near the p-GaN/AlGaN interface, which is a result of the dehydrogenation of pre-existing defects during low dose rate irradiation. Additionally, the results of the TCAD simulations, indicate that the trap-assisted tunneling (TAT) process, which involves the recombination of trap-assisted holes with electrons in the p-GaN layer, may dominate the physical mechanisms responsible for the increase in gate leakage current ( $\text{I}_{\mathrm {g}}$ - $\text{V}_{\mathrm {gs}}$ ). These results may provide a basis for understanding the role of radiation-induced traps on electrical parameters degradations for p-GaN gate HEMTs.
