Performance simulation of solar cell based on AZO/CdTe heterostructure by SCAPS 1D software
José Carlos Zepeda Medina,
Enrique Rosendo Andrés,
Crisóforo Morales Ruíz,
Eduardo Camacho Espinosa,
Leticia Treviño Yarce,
Reina Galeazzi Isasmendi,
Román Romano Trujillo,
Godofredo García Salgado,
Antonio Coyopol Solis,
Fabiola Gabriela Nieto Caballero,
Ana Cristina Carranza Sanchez
Affiliations
José Carlos Zepeda Medina
Posgrado en Dispositivos Semiconductores (PDS), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 Sur, Edif. IC 5 C. U. Col. San Manuel, Puebla, C. P., 72520, Mexico; Corresponding author.
Enrique Rosendo Andrés
Posgrado en Dispositivos Semiconductores (PDS), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 Sur, Edif. IC 5 C. U. Col. San Manuel, Puebla, C. P., 72520, Mexico
Crisóforo Morales Ruíz
Posgrado en Dispositivos Semiconductores (PDS), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 Sur, Edif. IC 5 C. U. Col. San Manuel, Puebla, C. P., 72520, Mexico
Eduardo Camacho Espinosa
Centro de Investigación y de Estudios Avanzados Del IPN Unidad Mérida, Depto. Física Aplicada, Km. 6, Antigua Carretera a Progreso, A. P. 73-Cordemex C.P., 97310, Mérida, Yucatán, Mexico
Leticia Treviño Yarce
Ingeniería en Energía, Universidad Politécnica de Amozoc, Av. Ampliación Luis Oropeza No. 5202, San Andrés Las Vegas 1ra Sección, Código Postal, 72980, Mexico
Reina Galeazzi Isasmendi
Posgrado en Dispositivos Semiconductores (PDS), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 Sur, Edif. IC 5 C. U. Col. San Manuel, Puebla, C. P., 72520, Mexico
Román Romano Trujillo
Posgrado en Dispositivos Semiconductores (PDS), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 Sur, Edif. IC 5 C. U. Col. San Manuel, Puebla, C. P., 72520, Mexico
Godofredo García Salgado
Posgrado en Dispositivos Semiconductores (PDS), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 Sur, Edif. IC 5 C. U. Col. San Manuel, Puebla, C. P., 72520, Mexico
Antonio Coyopol Solis
Posgrado en Dispositivos Semiconductores (PDS), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 Sur, Edif. IC 5 C. U. Col. San Manuel, Puebla, C. P., 72520, Mexico
Fabiola Gabriela Nieto Caballero
Facultad de Ciencias Químicas (FCQ) Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 18 Sur, Edif. FCQ 1 C. U. Col. San Manuel, Puebla, C. P, 72520, Mexico
Ana Cristina Carranza Sanchez
Posgrado en Dispositivos Semiconductores (PDS), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 Sur, Edif. IC 5 C. U. Col. San Manuel, Puebla, C. P., 72520, Mexico
Simulation and analysis of solar cells based on the heterojunction of zinc oxide doped with aluminum (AZO) and cadmium telluride (CdTe) with the structure (Al/AZO/CdTe/NiO/Ni) using the Simulator of the capacitance of solar cells - 1 dimension (SCAPS-1D) has been presented in this paper. AZO is used as a window layer and Nickel oxide (NiO) has been introduced as a hole transport layer (HTL). Through the software, the effect of thickness, absorber (CdTe), and window (AZO) layers carrier concentration, operating temperature, and resistances (series and shunt) have been studied. Simulation results show that the solar cell performance can be greatly improved by adjusting the layer's thickness and carrier concentration, obtaining optimal values of 10 nm and 1018cm−3 for the AZO layer, while for the CdTe layer they were 2 μm and 1015cm−3. The optimum series and shunt resistances are in the range of 1–3 Ωcm2 and 1800–2200 Ωcm2 respectively. A maximum power conversion efficiency (PCE) of 14.2% is achieved with an open circuit voltage (Voc) of 0.74 V, short circuit current density (Jsc) of 26.15 mA/cm2 and a fill factor (FF) of 72.83%, this shows AZO potential to be considered as an interesting material to replace CdS window layer.
