Author Correction: Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage

Affiliations

Jian Zhi: State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences
Min Zhou: Hefei National Laboratory for Physical Science at the Microscale, Department of Applied Chemistry, University of Science and Technology of China
Zhen Zhang: SCNU-TUE Joint Lab of Device Integrated Responsive Materials (DIRM), South China Normal University
Oliver Reiser: Institute of Organic Chemistry, University of Regensburg
Fuqiang Huang: State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences

Abstract

A Correction to this paper has been published: https://doi.org/10.1038/s41467-021-21705-3