Memory and Transduction Prospects for Silicon T Center Devices

Abstract

The T center, a silicon-native spin-photon interface with telecommunication-band optical transitions and long-lived microwave qubits, offers an appealing new platform for both optical quantum memory and microwave-to-optical telecommunication-band transduction. A wide range of quantum memory and transduction schemes could be implemented withT center ensembles with sufficient optical depth, with advantages and disadvantages that depend sensitively on the ensemble properties. In this work we characterize T center spin ensembles to inform device design. We perform the first T ensemble optical depth measurement and calculate the improvement in center density or resonant optical enhancement required for efficient optical quantum memory. We further demonstrate a coherent microwave interface by coherent population trapping and Autler-Townes splitting. We then determine the most promising microwave and optical quantum memory protocol for such ensembles. By estimating the memory efficiency both in free space and in the presence of a cavity, we show that efficient optical memory is possible with reasonable optical density forecasts. Finally, we formulate a transduction proposal and discuss the achievable efficiency and fidelity.