Doping effect on the thermoelectric transport properties of HfTe5

Abstract

We studied the influence of doping HfTe5 with 5% Ti on electric (resistivity and the Hall effect) and thermoelectric transport properties (the Seebeck coefficient, magneto-thermoelectric power, and Nernst effect). The properties of 5% Ti-doped HfTe5 do not change much. Nernst coefficients larger than magneto-thermoelectric power were observed in a temperature range near the compensation temperature at which the Seebeck coefficient vanishes. This indicates that a two-carrier conduction model could describe our experimental results. Owing to the high thermoelectric performance, thermopiles were made on a printed circuit board based on doped and undoped HfTe5. A large Seebeck voltage was obtained at room temperature. It became even larger in a low temperature range and presented strong magnetic field dependence.