Influence of the Addition of Rare Earth Elements on the Energy Storage and Optical Properties of Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>–0.06BaTiO<sub>3</sub> Polycrystalline Thin Films
Ilham Hamdi Alaoui,
Mebarki Moussa,
Nathalie Lemée,
Françoise Le Marrec,
Anna Cantaluppi,
Delphine Favry,
Abdelilah Lahmar
Affiliations
Ilham Hamdi Alaoui
Laboratory of Condensed Matter Physics, University of Picardie Jules Verne, 33 Rue Saint Leu, 80039 Amiens, France
Mebarki Moussa
Laboratory of Condensed Matter Physics, University of Picardie Jules Verne, 33 Rue Saint Leu, 80039 Amiens, France
Nathalie Lemée
Laboratory of Condensed Matter Physics, University of Picardie Jules Verne, 33 Rue Saint Leu, 80039 Amiens, France
Françoise Le Marrec
Laboratory of Condensed Matter Physics, University of Picardie Jules Verne, 33 Rue Saint Leu, 80039 Amiens, France
Anna Cantaluppi
Laboratory of Condensed Matter Physics, University of Picardie Jules Verne, 33 Rue Saint Leu, 80039 Amiens, France
Delphine Favry
Laboratory of Condensed Matter Physics, University of Picardie Jules Verne, 33 Rue Saint Leu, 80039 Amiens, France
Abdelilah Lahmar
Laboratory of Condensed Matter Physics, University of Picardie Jules Verne, 33 Rue Saint Leu, 80039 Amiens, France
Rare earth element-doped Bi0.5Na0.5TiO3–BaTiO3 (BNT–BT–RE) polycrystalline thin films were processed on a platinized substrate by chemical solution deposition. The microstructure, dielectric, and ferroelectric properties were investigated for all prepared films. It was found that the incorporation of rare earth elements into the BNT–BT matrix increases both the dielectric constant and the breakdown strength while maintaining low dielectric losses, leading to an enhancement of the energy storage density to Wrec = 12 and 16 J/cm3 under an effective field of E = 2500 kV/cm, for Nd- and Dy-based films, respectively. The optical properties of films containing the lanthanide element were investigated and the obtained results bear interest for luminescence applications. The simultaneous appearance of ferroelectric and optical properties in the system under investigation is very promising for advanced optoelectronic devices.
