Protocol for scalable top-down fabrication of InP nanopillars using a self-assembled random mask technique

Abstract

Summary: Nanostructured III-V semiconductors are attractive for solar energy conversion applications owing to their excellent light harvesting and optoelectronic properties. Here, we present a protocol for scalable fabrication of III-V semiconductor nanopillars using a simple and cost-effective top-down approach, combining self-assembled random mask and plasma etching techniques. We describe the deposition of Au/SiO2 layers to prepare random etch mask. We then detail the fabrication of nanopillars and photocathodes. Finally, we demonstrate III-V semiconductor nanopillars as a photoelectrode for photoelectrochemical water splitting.For complete details on the use and execution of this protocol, please refer to Narangari et al. (2021).1 : Publisher’s note: Undertaking any experimental protocol requires adherence to local institutional guidelines for laboratory safety and ethics.

Keywords

• Physics
• Energy
• Material sciences