Application of an Electrical Low Pressure Impactor (ELPI) for Residual Particle Measurement in an Epitaxial Growth Reactor

Abstract

The purpose of this study was to determine the feasibility of using an electrical low pressure impactor (ELPI) for analyzing residual particles in a Si epitaxial growth process chamber and establish an application technique. Prior to experimental measurements, some preliminary works were conducted, including an inlet improvement of a cascade impactor, vacuum fitting fastening and flow rate adjustment, and a vacuum leak test. After that, residual particles in the process chamber were measured during N2 gas purge using an ELPI due to its advantages including the real-time measurement of particles and the ability to separate and collect particles by their diameters. In addition, ELPI could be used to obtain particle size distribution and see the distribution trend for both number and mass concentration. The results of the real-time analysis of the total particle count revealed that the concentration at the endpoint compared to that at the beginning of the measurement by decreased 36.9%. Scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM–EDS) analysis of collected particles was performed using two types of substrates: Al foil and a Si wafer. The results showed that most particles were Si particles, while few particles had Si and Cl components. ELPI has the clear advantages of real-time particle concentration measurement and simultaneous collection. Thus, we believe that it can be more actively used for particle measurement and analysis in the semiconductor industry, which has many critical micro/nanoparticle issues.

Keywords

• semiconductor process
• process particle
• epitaxial growth
• electrical low pressure impactor (ELPI)
• particle size distribution (PSD)