High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels

Abstract

Highlights A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of D NW = 22.4 ± 2.4 nm and interwire spacing of 90 nm. A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ultrathin quasi-1D channels for gate-all-around field-effect transistors (GAA-FETs). By optimizing the source/drain metal contacts, high-performance catalytical GAA-FETs have been successfully demonstrated, achieving a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec-1.

Keywords

• In-plane solid-liquid-solid
• Ultrathin silicon nanowires
• Gate-all-around field-effect transistors (GAA-FETs)