AIP Advances (Jul 2013)

Competitive In and Ga incorporations for InxGa1-xN (0.29<x<0.36) nanorods grown at a moderate temperature

  • S. M. Hamad,
  • D. P. Norman,
  • Q. Y. Chen,
  • F. Keles,
  • H. W. Seo

DOI
https://doi.org/10.1063/1.4816805
Journal volume & issue
Vol. 3, no. 7
pp. 072128 – 072128

Abstract

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The kinetics of In and Ga incorporation into wurtzite InxGa1−xN nanorods, grown by plasma-assisted MBE under N-rich conditions at a moderate temperature, has been systematically investigated with Ga-flux set as a growth parameter at three distinct values while varying In-flux. The interplay of Ga and In fluxes in their contributions to the incorporation was found to disagree with the empirical Böttcher's formula, of which the reliability is based on the assumption of preeminent Ga incorporation. The competition between Ga and In for incorporations involves, we believe, the displacement of In from the weaker In-N bonds by Ga to form the Ga-N bonds at high In and Ga fluxes.