Application of Metal-Oxide-Semiconductor
structures containing silicon nanocrystals in
radiation dosimetry
Nesheva Diana,
Nedev Nikola,
Curiel Mario,
Dzhurkov Valeri,
Arias Abraham,
Manolov Emil,
Mateos David,
Valdez Benjamin,
Bineva Irina,
Herrera Rigoberto
Affiliations
Nesheva Diana
Institute of Solid State
Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
Blvd, 1784 Sofia, Bulgaria
Nedev Nikola
Institute of Engineering, Autonomous
University of Baja California, Benito Juarez Blvd. esc.
Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
Curiel Mario
Institute of Engineering, Autonomous
University of Baja California, Benito Juarez Blvd. esc.
Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
Dzhurkov Valeri
Institute of Solid State
Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
Blvd, 1784 Sofia, Bulgaria
Arias Abraham
Institute of Engineering, Autonomous
University of Baja California, Benito Juarez Blvd. esc.
Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
Manolov Emil
Institute of Solid State
Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
Blvd, 1784 Sofia, Bulgaria
Mateos David
Institute of Engineering, Autonomous
University of Baja California, Benito Juarez Blvd. esc.
Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
Valdez Benjamin
Institute of Engineering, Autonomous
University of Baja California, Benito Juarez Blvd. esc.
Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
Bineva Irina
Institute of Solid State
Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
Blvd, 1784 Sofia, Bulgaria
Herrera Rigoberto
Institute of Engineering, Autonomous
University of Baja California, Benito Juarez Blvd. esc.
Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO2 layerwhen applying the two-step annealing. Two types of MOS structures with three region gate dielectricswere fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.
