1064/1319 nm Dual-Wavelength Alternating Electro-Optic Q-Switched Laser Based on the Common Q-Switching Bias Voltage
Jingdong Sun,
Chunhe Yu,
Yuan Dong,
Chunting Wu,
Guangyong Jin
Affiliations
Jingdong Sun
Jilin Key Laboratory of Solid-State Laser Technology and Application, School of Physics, Changchun University of Science and Technology, Changchun 130022, China
Chunhe Yu
Jilin Key Laboratory of Solid-State Laser Technology and Application, School of Physics, Changchun University of Science and Technology, Changchun 130022, China
Yuan Dong
Jilin Key Laboratory of Solid-State Laser Technology and Application, School of Physics, Changchun University of Science and Technology, Changchun 130022, China
Chunting Wu
Jilin Key Laboratory of Solid-State Laser Technology and Application, School of Physics, Changchun University of Science and Technology, Changchun 130022, China
Guangyong Jin
Jilin Key Laboratory of Solid-State Laser Technology and Application, School of Physics, Changchun University of Science and Technology, Changchun 130022, China
A dual-wavelength alternating electro-optic (EO) Q-switched laser operating at 1064 and 1319 nm is designed, which takes the structure of double the gain crystals and a single EO modulator with the common Q-switching bias voltage (CQBV). The output characteristics of alternating dual-wavelength pulse lasers are studied via simulations and experiments. The results show that the energy ratio of the two lasing wavelengths can be controlled by changing the CQBV. This is because the CQBV affects the loss of two resonators, 1064 and 1319 nm, at the same time. The gain–loss relationship in the dual-wavelength laser resonators can be controlled by changing the CQBV in a certain range.
