Frequency upshift via flash ionization phenomena using semiconductor plasma

Abstract

We have demonstrated frequency upshift in the terahertz region by flash ionization. The magnitude of upshift frequency is tuned by the laser intensity. A proof of principle experiment has been performed with a plasma creation time scale much shorter than the period of the electromagnetic wave and a plasma length longer than its wavelength. Frequency upshifted from 0.35 to 3.5 THz by irradiating a ZnSe crystal with a ultra-short laser pulse has been observed.