Terahertz meta-chip switch based on C-ring coupling

Gong Sen; Zeng Hongxin; Zhang Qianyu; Bi Chunyang; Wang Lan; Zhou Tianchi; Yang Ziqiang; Zhang Yaxin; Meng Fanzhong; Zhang Zhenpeng; Fang Yuan

doi:10.1515/nanoph-2021-0646

Nanophotonics (Jan 2022)

Terahertz meta-chip switch based on C-ring coupling

Gong Sen,
Zeng Hongxin,
Zhang Qianyu,
Bi Chunyang,
Wang Lan,
Zhou Tianchi,
Yang Ziqiang,
Zhang Yaxin,
Meng Fanzhong,
Zhang Zhenpeng,
Fang Yuan

Affiliations

Gong Sen: Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Zeng Hongxin: Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Zhang Qianyu: Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Bi Chunyang: Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Wang Lan: Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Zhou Tianchi: Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Yang Ziqiang: Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Zhang Yaxin: Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Meng Fanzhong: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang050051, Shijiazhuang, China
Zhang Zhenpeng: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang050051, Shijiazhuang, China
Fang Yuan: National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang050051, Shijiazhuang, China

DOI: https://doi.org/10.1515/nanoph-2021-0646
Journal volume & issue: Vol. 11, no. 9
pp. 2037 – 2044

Abstract

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Terahertz switch is one of the key components of future communication, radar, and imaging systems. Limited by the strong electromagnetic coupling in subwavelength scale, the traditional terahertz switch is difficult to meet the increasing application requirements. In this paper, a parallel topology terahertz meta-chip switch based on the combination of equivalent circuit theory and electromagnetic coupling is proposed. The meta-chip is realized by adjusting the density of two-dimensional electron gas of InP-HEMT, which converts the electromagnetic coupling between the microstructure and microstrips. By using the 90 nm gate length InP-HEMT process, a C-ring loaded meta-chip is fabricated and tested in this paper. The results show an insertion loss lower than 1 dB with a 10 dB switching ratio, which is 20% higher than that without C-ring while ensuring the rather low insertion loss. It shows that the presented mechanism has positive significance for the design of terahertz band functional devices.

Published in Nanophotonics

ISSN: 2192-8606 (Print); 2192-8614 (Online)
Publisher: De Gruyter
Country of publisher: Germany
LCC subjects: Science: Physics
Website: https://www.degruyter.com/journal/key/nanoph/html#submit

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