Terahertz meta-chip switch based on C-ring coupling
Gong Sen,
Zeng Hongxin,
Zhang Qianyu,
Bi Chunyang,
Wang Lan,
Zhou Tianchi,
Yang Ziqiang,
Zhang Yaxin,
Meng Fanzhong,
Zhang Zhenpeng,
Fang Yuan
Affiliations
Gong Sen
Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Zeng Hongxin
Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Zhang Qianyu
Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Bi Chunyang
Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Wang Lan
Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Zhou Tianchi
Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Yang Ziqiang
Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Zhang Yaxin
Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Meng Fanzhong
National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang050051, Shijiazhuang, China
Zhang Zhenpeng
National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang050051, Shijiazhuang, China
Fang Yuan
National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang050051, Shijiazhuang, China
Terahertz switch is one of the key components of future communication, radar, and imaging systems. Limited by the strong electromagnetic coupling in subwavelength scale, the traditional terahertz switch is difficult to meet the increasing application requirements. In this paper, a parallel topology terahertz meta-chip switch based on the combination of equivalent circuit theory and electromagnetic coupling is proposed. The meta-chip is realized by adjusting the density of two-dimensional electron gas of InP-HEMT, which converts the electromagnetic coupling between the microstructure and microstrips. By using the 90 nm gate length InP-HEMT process, a C-ring loaded meta-chip is fabricated and tested in this paper. The results show an insertion loss lower than 1 dB with a 10 dB switching ratio, which is 20% higher than that without C-ring while ensuring the rather low insertion loss. It shows that the presented mechanism has positive significance for the design of terahertz band functional devices.