Dual‐channel type tunable field‐effect transistors based on vertical bilayer WS2(1 − x)Se2x/SnS2 heterostructures
Biyuan Zheng,
Dong Li,
Chenguang Zhu,
Jianyue Lan,
Xingxia Sun,
Weihao Zheng,
Huawei Liu,
Xuehong Zhang,
Xiaoli Zhu,
Yexin Feng,
Tao Xu,
Litao Sun,
Gengzhao Xu,
Xiao Wang,
Chao Ma,
Anlian Pan
Affiliations
Biyuan Zheng
Key Laboratory for Micro‐Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering Hunan University Changsha China
Dong Li
Key Laboratory for Micro‐Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering Hunan University Changsha China
Chenguang Zhu
Key Laboratory for Micro‐Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering Hunan University Changsha China
Jianyue Lan
Suzhou Institute of Nano‐Tech and Nano‐Bionics, Chinese Academy of Sciences Suzhou China
Xingxia Sun
Key Laboratory for Micro‐Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering Hunan University Changsha China
Weihao Zheng
Key Laboratory for Micro‐Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering Hunan University Changsha China
Huawei Liu
School of Physics and Electronics, Hunan University Changsha China
Xuehong Zhang
School of Physics and Electronics, Hunan University Changsha China
Xiaoli Zhu
School of Physics and Electronics, Hunan University Changsha China
Yexin Feng
School of Physics and Electronics, Hunan University Changsha China
Tao Xu
SEU‐FEI Nano‐Pico Center, Key Laboratory of MEMS of Ministry of Education Southeast University Nanjing China
Litao Sun
SEU‐FEI Nano‐Pico Center, Key Laboratory of MEMS of Ministry of Education Southeast University Nanjing China
Gengzhao Xu
Suzhou Institute of Nano‐Tech and Nano‐Bionics, Chinese Academy of Sciences Suzhou China
Xiao Wang
School of Physics and Electronics, Hunan University Changsha China
Chao Ma
Key Laboratory for Micro‐Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering Hunan University Changsha China
Anlian Pan
Key Laboratory for Micro‐Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering Hunan University Changsha China
Abstract Layered semiconductor heterostructures are essential elements in modern electronic and optoelectronic devices. Dynamically engineering the composition of these heterostructures may enable the flexible design of the properties of heterostructure‐based electronics and optoelectronics as well as their optimization. Here, we report for the first time a two‐step chemical vapor deposition approach for a series of WS2(1 − x)Se2x/SnS2 vertical heterostructures with high‐quality and large areas. The steady‐state photoluminescence results exhibit an obvious composition‐related quenching ratio, revealing a strong coherence between the band offset and the charge transfer efficiency at the junction interface. Based on the achieved heterostructures, dual‐channel back‐gate field‐effect transistors were successfully designed and exhibited typical composition‐dependent transport behaviors, and pure n‐type unipolar transistors to ambipolar transistors were realized in such systems. The direct vapor growth of these novel vertical WS2(1 − x)Se2x/SnS2 heterostructures could offer an interesting system for probing new physical properties and provide a series of layered heterostructures for high‐quality devices.
