Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization

Abstract

The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the length and width of the gate. Intrinsic parameters are extracted from current-voltage characteristics and obtained dependent on these dimensions.

Keywords

• drain-substrate diode
• intrinsic parameters
• current-voltage characteristics.