Localized interlayer excitons in MoSe2–WSe2 heterostructures without a moiré potential

Abstract

The spectrally narrow photoluminescence lines occurring in transition metal dichalcogenides (TMD) heterostructures at low temperature have been attributed to interlayer excitons (IXs) localized by the moiré potential between the TMD layers. Here, the authors show that these lines are present even when the moiré potential is suppressed by inserting an hBN spacer between the TMD layers.