Giant Electroresistance in Ferroionic Tunnel Junctions
Jiankun Li,
Ning Li,
Chen Ge,
Heyi Huang,
Yuanwei Sun,
Peng Gao,
Meng He,
Can Wang,
Guozhen Yang,
Kuijuan Jin
Affiliations
Jiankun Li
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Ning Li
International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
Chen Ge
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai 200241, China; Corresponding author
Heyi Huang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Yuanwei Sun
International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
Peng Gao
International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China; Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China; Corresponding author
Meng He
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Can Wang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
Guozhen Yang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Kuijuan Jin
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China; Corresponding author
Summary: Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It functions as a ferroelectric tunnel junction at low resistance state and as a Schottky junction at high resistance state, due to interface engineering through the field-induced migration of oxygen vacancies. An extremely large electroresistance with ON/OFF ratios of 5.1×107 at room temperature and 2.1×109 at 10 K is achieved, using an ultrathin BaTiO3-δ layer as the ferroelectric barrier and a semiconducting Nb-doped SrTiO3 substrate as the bottom electrode. The results point toward an appealing way for the design of high-performance resistive switching devices based on ultrathin oxide heterostructures by ionic controlled interface engineering. : Interface Science; Transport Property of Condensed Matter; Devices Subject Areas: Interface Science, Transport Property of Condensed Matter, Devices
