Proposal for a spin logic device based on magneto‐electric effect and spin Hall effect

Abstract

Abstract Based on magneto‐electric (ME) effect and spin Hall effect (SHE), the authors propose a novel spin logic device named MESH‐SLD. In MESH‐SLD, the charge current is transmitted in the channel by employing inverse SHE, which solves the dissipation problem of spin current in the channel of all‐spin logic device (ASLD). By using a magnetization‐dynamics/spin‐transport hybrid model, the authors have investigated the influence of working voltage, channel lengths, and materials on the performance of the MESH‐SLD. And the simulation results show that the energy dissipation of the MESH‐SLD only increases approximately linearly with the increase of channel length, while the switching delay remains almost unchanged. In addition, with the increase of the spin Hall angle of the channel material, the energy dissipation and the minimum working voltage of the MESH‐SLD decrease significantly. Most importantly, compared with conventional ASLD, the proposed MESH‐SLD improve the switching delay and the energy dissipation by about 2.5 times and 851.8 times, respectively.

Keywords

• magnetic switching
• magnetoelectronics
• nanoelectronics
• spin dynamics
• spin–orbit interactions