High Performance Phototransistor Based on 0D-CsPbBr<sub>3</sub>/2D-MoS<sub>2</sub> Heterostructure with Gate Tunable Photo-Response
Chen Yang,
Yangyang Xie,
Lei Zheng,
Hanqiang Liu,
Peng Liu,
Fang Wang,
Junqing Wei,
Kailiang Zhang
Affiliations
Chen Yang
Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Yangyang Xie
Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Lei Zheng
Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Hanqiang Liu
Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Peng Liu
Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Fang Wang
Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Junqing Wei
Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Kailiang Zhang
Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Monolayer MoS2 has been widely researched in high performance phototransistors for its high carrier mobility and strong photoelectric conversion ability. However, some defects in MoS2, such as vacancies or impurities, provide more possibilities for carrier recombination; thus, restricting the formation of photocurrents and resulting in decreased responsiveness. Herein, all-inorganic CsPbBr3 perovskite quantum dots (QDs) with high photoelectric conversion efficiency and light absorption coefficients are introduced to enhance the responsivity of a 2D MoS2 phototransistor. The CsPbBr3/MoS2 heterostructure has a type II energy band, and it has a high responsivity of ~1790 A/W and enhanced detectivity of ~2.4 × 1011 Jones. Additionally, the heterostructure CsPbBr3/MoS2 enables the synergistic effect mechanism of photoconduction and photogating effects with the gate tunable photo-response, which could also contribute to an improved performance of the MoS2 phototransistor. This work provides new strategies for performance phototransistors and is expected to play an important role in many fields, such as optical communication, environmental monitoring and biomedical imaging, and promote the development and application of related technologies.
