Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films
Fernando Avelar-Muñoz,
Roberto Gómez-Rosales,
Arturo Agustín Ortiz-Hernández,
Héctor Durán-Muñoz,
Javier Alejandro Berumen-Torres,
Jorge Alberto Vagas-Téllez,
Hugo Tototzintle-Huitle,
Víctor Hugo Méndez-García,
José de Jesús Araiza,
José Juan Ortega-Sigala
Affiliations
Fernando Avelar-Muñoz
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Campus Universitario II, Av. Preparatoria s/n, Zacatecas 98060, Zacatecas, Mexico
Roberto Gómez-Rosales
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Campus Universitario II, Av. Preparatoria s/n, Zacatecas 98060, Zacatecas, Mexico
Arturo Agustín Ortiz-Hernández
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Campus Universitario II, Av. Preparatoria s/n, Zacatecas 98060, Zacatecas, Mexico
Héctor Durán-Muñoz
Unidad Académica de Ingeniería Eléctrica, Universidad Autónoma de Zacatecas, Campus Ingeniería, Ramón López Velarde 801, Col. Centro, Zacatecas 98000, Zacacatecas, Mexico
Javier Alejandro Berumen-Torres
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Campus Universitario II, Av. Preparatoria s/n, Zacatecas 98060, Zacatecas, Mexico
Jorge Alberto Vagas-Téllez
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Campus Universitario II, Av. Preparatoria s/n, Zacatecas 98060, Zacatecas, Mexico
Hugo Tototzintle-Huitle
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Campus Universitario II, Av. Preparatoria s/n, Zacatecas 98060, Zacatecas, Mexico
Víctor Hugo Méndez-García
Laboratorio Nacional-CIACyT, Universidad Autónoma de San Luis Potosí, Av. Sierra Leona 550, Col. Lomas 2a. Sección, San Luis Potosí 78210, San Luis Potosí, Mexico
José de Jesús Araiza
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Campus Universitario II, Av. Preparatoria s/n, Zacatecas 98060, Zacatecas, Mexico
José Juan Ortega-Sigala
Unidad Académica de Física, Universidad Autónoma de Zacatecas, Campus Universitario II, Av. Preparatoria s/n, Zacatecas 98060, Zacatecas, Mexico
p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous. However, after annealing, they crystallize in the typical hexagonal wurtzite structure of ZnO. The Ag-N dual acceptors were incorporated substitutionally in the structure of zinc oxide, and achieving that; the three samples presented the p-type conductivity in the ZnO. Initial electrical properties showed a low resistivity of from 1 to 10−3 Ω·cm, Hall mobility of tens cm2/V·s, and a hole concentration from 1017 to 1019 cm−3. The electrical stability analysis reveals that the p-type conductivity of the ZnO:Ag,N films is very stable and does not revert to n-type, even after 36 months of aging. These results reveal the feasibility of using these films for applications in short-wavelength or transparent optoelectronic devices.
