Insights Into the Two-Dimensional MoS₂ Grown on AlGaN(GaN) Substrates by CVD Method

Abstract

Two-dimensional (2D) MoS2 was grown on AlGaN(GaN) substrates by chemical vapor deposition (CVD) and 2D-3D MoS2-AlGaN(GaN) heterostructures were formed. The MoS2 crystal on AlGaN surface has a mixed and irregular shape including single and multiple layers, while the single layer of triangular MoS2 is basically prepared on GaN surface. Combined with theoretical first-principles analysis, it is found the adsorption of AlGaN to MoS2 is lower than that of GaN, which leads to the deposition of MoS2 molecules on AlGaN surface, forming multilayer shapes. In addition, Both the MoS2-AlGaN(GaN) heterostructures exhibit indirect band gaps and broad-band light absorption performances.

Keywords

• Chemical vapor deposition
• GaN substrate
• heterostructure
• two-dimensional MoS_2