e-Prime: Advances in Electrical Engineering, Electronics and Energy (Jun 2023)
Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies
Abstract
In this paper, we outline the current state of the art and trends for future development in millimeter-wave (mmw) amplifiers based on gallium nitride (GaN) semiconductors. To that end, we give an overview of recent technological results of currently operational GaN foundries and classify them with respect to their maximum frequency of operation and the current-gain cutoff frequency. Furthermore, focusing on frequencies above 80 GHz, we develop a comprehensive survey of GaN high-power amplifiers (HPAs) and provide a comparison to competing technologies such as indium phosphide (InP) and silicon germanium (SiGe). We also introduce a newly developed 6-stage GaN amplifier that is targeted towards the upper D-band. It provides an output power of up to 22.0 dBm, which sets a new record for GaN HPAs in this band. From our survey, we find that while GaN exhibits an impressive power density, its gain and efficiency characteristics particularly beyond 120 GHz still warrant improvement. Therefore, we describe several areas of future improvement such as the gate module scaling, mitigation of trapping phenomena and recent trends in processing of ohmic contacts and alternative epitaxial stacks. With these further developments, more widespread adoption of GaN-based technologies at even higher frequencies seems feasible in the coming years.
