Materials (Sep 2018)

Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results

  • Paul R. Edwards,
  • Kevin P. O’Donnell,
  • Akhilesh K. Singh,
  • Douglas Cameron,
  • Katharina Lorenz,
  • Mitsuo Yamaga,
  • Jacob H. Leach,
  • Menno J. Kappers,
  • Michal Boćkowski

DOI
https://doi.org/10.3390/ma11101800
Journal volume & issue
Vol. 11, no. 10
p. 1800

Abstract

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Europium is the most-studied and least-well-understood rare earth ion (REI) dopant in GaN. While attempting to increase the efficiency of red GaN light-emitting diodes (LEDs) by implanting Eu+ into p-type GaN templates, the Strathclyde University group, in collaboration with IST Lisbon and Unipress Warsaw, discovered hysteretic photochromic switching (HPS) in the photoluminescence spectrum of doubly doped GaN(Mg):Eu. Our recent work, summarised in this contribution, has used time-, temperature- and light-induced changes in the Eu intra-4f shell emission spectrum to deduce the microscopic nature of the Mg-Eu defects that form in this material. As well as shedding light on the Mg acceptor in GaN, we propose a possible role for these emission centres in quantum information and computing.

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