Influence of Different Annealing Conditions on Optical and Electrical Properties of Sn Doped ZnO Thin Films

Abstract

Sn doped ZnO thin films(SZO) was prepared on glasses by sol-gel method.The influence of six kinds of annealing conditions,including air annealing,low vacuum annealing,high vacuum annealing,N2 annealing,triple high vacuum annealing,cycle annealing on the crystal structure, optical and electrical properties of the SZO film was studied.The results show that all the SZO samples show preferential orientation along the c-axis.The SZO thin films has the optimum crystal structure and electrical property on the high vacuum annealing conditions.The minimum resistivity of the film is 5.4×10-2Ω·cm.The average visible transmittance of SZO thin film is above 85%.The photoluminescence peaks at 390nm and 440nm is observed in all the samples (the excitation wavelength is set at 325nm).The intensity of the peak at 440nm is enhanced significantly on air annealing,N2 annealing and low vacuum annealing.

Keywords

• sol-gel
• Sn doped ZnO (SZO) thin film
• annealing condition
• optical and electrical property