Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

Matthias Niethammer; Matthias Widmann; Torsten Rendler; Naoya Morioka; Yu-Chen Chen; Rainer Stöhr; Jawad Ul Hassan; Shinobu Onoda; Takeshi Ohshima; Sang-Yun Lee; Amlan Mukherjee; Junichi Isoya; Nguyen Tien Son; Jörg Wrachtrup

doi:10.1038/s41467-019-13545-z

Nature Communications (Dec 2019)

Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

Matthias Niethammer,
Matthias Widmann,
Torsten Rendler,
Naoya Morioka,
Yu-Chen Chen,
Rainer Stöhr,
Jawad Ul Hassan,
Shinobu Onoda,
Takeshi Ohshima,
Sang-Yun Lee,
Amlan Mukherjee,
Junichi Isoya,
Nguyen Tien Son,
Jörg Wrachtrup

Affiliations

Matthias Niethammer: 3rd Institute of Physics and Center for Applied Quantum Technologies, University of Stuttgart
Matthias Widmann: 3rd Institute of Physics and Center for Applied Quantum Technologies, University of Stuttgart
Torsten Rendler: 3rd Institute of Physics and Center for Applied Quantum Technologies, University of Stuttgart
Naoya Morioka: 3rd Institute of Physics and Center for Applied Quantum Technologies, University of Stuttgart
Yu-Chen Chen: 3rd Institute of Physics and Center for Applied Quantum Technologies, University of Stuttgart
Rainer Stöhr: 3rd Institute of Physics and Center for Applied Quantum Technologies, University of Stuttgart
Jawad Ul Hassan: Department of Physics, Chemistry and Biology, Linköping University
Shinobu Onoda: National Institutes for Quantum and Radiological Science and Technology
Takeshi Ohshima: National Institutes for Quantum and Radiological Science and Technology
Sang-Yun Lee: Center for Quantum Information, Korea Institute of Science and Technology
Amlan Mukherjee: 3rd Institute of Physics and Center for Applied Quantum Technologies, University of Stuttgart
Junichi Isoya: Faculty of Pure and Applied Sciences, University of Tsukuba
Nguyen Tien Son: Department of Physics, Chemistry and Biology, Linköping University
Jörg Wrachtrup: 3rd Institute of Physics and Center for Applied Quantum Technologies, University of Stuttgart

DOI: https://doi.org/10.1038/s41467-019-13545-z
Journal volume & issue: Vol. 10, no. 1
pp. 1 – 8

Abstract

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The efficiency of quantum state readout is one of the factors that determine the performance of point defects in semiconductors in practical applications. Here the authors demonstrate photo-electrical readout for silicon vacancies in silicon carbide, providing an alternative to optical detection.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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