Enhancement of terahertz response in a microstructure-integrated-type-II Dirac semimetal
Xuyang Lv,
Kaixuan Zhang,
Mengjie Jiang,
Shi Zhang,
Libo Zhang,
Li Han,
Huaizhong Xing,
Dong Wang,
Shiqi Lan,
Lin Wang,
Shijian Tian,
Xiaoshuang Chen
Affiliations
Xuyang Lv
College of Science, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, DongHua University, Shanghai 201620, China
Kaixuan Zhang
College of Science, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, DongHua University, Shanghai 201620, China
Mengjie Jiang
College of Science, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, DongHua University, Shanghai 201620, China
Shi Zhang
College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou 310024, China
Libo Zhang
State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Li Han
State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Huaizhong Xing
State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Dong Wang
State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Shiqi Lan
College of Science, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, DongHua University, Shanghai 201620, China
Lin Wang
State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Shijian Tian
College of Science, State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, DongHua University, Shanghai 201620, China
Xiaoshuang Chen
State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Terahertz detection technology has been confronted with formidable impediments, notably the paucity of sensitivity and operating temperature for photodetectors based on traditional bulk materials. In an attempt to surmount the difficulties, we propose an innovative terahertz detector based on a PtSe2 (type-II Dirac semimetallic material) integrated asymmetric antenna structure that can enhance the terahertz photoresponse by capitalizing on meticulous fabrication procedures. Experimental outcomes demonstrate the remarkable characteristics of the photodetector in the terahertz band, encompassing fast response time (7 µs), large responsivity (3.267 A/W), and low noise equivalent power (3.96 pW/Hz0.5). These accomplishments can be ascribed to the incorporation of the asymmetric metal contact of the four-leaf clover antenna structure and the excellent thermoelectric characteristics of PtSe2. This pioneering investigation consequently unveils a novel methodology for the creation of proficient PtSe2-based terahertz detectors and serves as a catalyst for the promotion of applications and further research within the terahertz sphere.
