The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces

Young Mo Kim; Youjung Kim; Kookrin Char

doi:10.1038/s43246-021-00179-2

Communications Materials (Jul 2021)

The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces

Young Mo Kim,
Youjung Kim,
Kookrin Char

Affiliations

Young Mo Kim: Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University
Youjung Kim: Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University
Kookrin Char: Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University

DOI: https://doi.org/10.1038/s43246-021-00179-2
Journal volume & issue: Vol. 2, no. 1
pp. 1 – 7

Abstract

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A 2D electron gas is known to form at the interface of some oxides. Here, 2D electron density is studied in the LaIn1-xGaxO3/Ba0.997La0.003SnO3 interface, revealing that increased alloying causes the migration of dislocations to the interface, destroying coherency and preventing 2D electron gas formation.

Published in Communications Materials

ISSN: 2662-4443 (Online)
Publisher: Nature Portfolio
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.nature.com/commsmat/

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