Passively Q-Switched Integrated Tm: YAG&#x002F;Ho:YAP Laser

Haizhou Huang; Wen Weng; Huagang Liu; Jinhui Li; Yan Ge; Hui Zheng; Wenxiong Lin

doi:10.1109/JPHOT.2021.3130419

IEEE Photonics Journal (Jan 2022)

Passively Q-Switched Integrated Tm: YAG/Ho:YAP Laser

Haizhou Huang,
Wen Weng,
Huagang Liu,
Jinhui Li,
Yan Ge,
Hui Zheng,
Wenxiong Lin

Affiliations

Haizhou Huang: ORCiD; Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou, China
Wen Weng: School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
Huagang Liu: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou, China
Jinhui Li: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou, China
Yan Ge: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou, China
Hui Zheng: Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou, China
Wenxiong Lin: ORCiD; Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou, China

DOI: https://doi.org/10.1109/JPHOT.2021.3130419
Journal volume & issue: Vol. 14, no. 2
pp. 1 – 5

Abstract

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We firstly propose the integration of heterogeneous Tm:YAG and Ho:YAP crystals into a single bulk structure for a compact, diode-pumped passively Q-switched (PQS) Ho laser. Efficient 2129 nm laser, with maximum CW power of 6.67 W was obtained from the Tm:YAG/Ho:YAP gain medium, with slope efficiency of 38.3% and optical conversion efficiency of 27.4% by considering the incident diode power at 785 nm. Modulated by a Cr:ZnSe saturable absorber inside a hybrid cavity, characteristic self-pulsing of the integrated Ho laser can be suppressed for a stable PQS process, where average output power of 743 mW at 2053.3 nm was obtained with shortest pulse duration of 123 ns at 14.2 kHz. As the maximum thermal stress of 48.2 MPa is far below the fracture limits of each integrated section (∼160 MPa), higher laser power can be expected. The results pave the way to explore the integration of other existing Tm-doped and Ho-doped hosts for an accessible 2.1 μm source.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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