Modeling and simulation of short channel length effect in open drain MOSFET THz detectors

Abstract

Abstract THz radiation detection using FET devices has attracted increasing attention lately. In this paper, we further study a simulated model of FET rectification detection in short channel length. To achieve this, both physics-based analytic model and a detailed TCAD simulation were contacted and compared. The analytical model provided detailed dependence of the response on the channel length below the extension length of the radiation. However, the simulation results were validated by comparison with the experimental data to confirm the validity of the theoretical model. These results present a new model of rectification for short channel lengths and its dependence on the extinction of AC signal through the channel.

Keywords

• THz detector
• Si MOSFET
• Open drain mode
• Channel length