Magnetization switching and performance of an optimized bicomponent multiferroic nanomagnet

Abstract

Achieving complete magnetization switching is a significant challenge in the electrical control of magnetic devices. In this paper, we propose a structure called bicomponent multiferroic nanomagnet (BMN) to study strain-mediated magnetization switching behavior. The BMN consists of a complete piezoelectric layer and a magnetostrictive layer made of bicomponent magnetic materials. Our team successfully developed a dynamic model for the magnetization of BMNs. By micromagnetic simulation, the results show that the strict requirements for a precise applied voltage period can be overcome in such a BMN, and a 180° magnetization switching can be achieved with only a square-wave voltage signal and a pulse width (tth) larger than 0.5 ns, given that the amplitude of the voltage is 60 mV. In addition, we also investigated the tolerance window of material composition and geometry, and proved that BMNs have sufficient error margins and the switching rate of BMNs can reach 1.67 GHz within the error margins at room temperature. Our proposed BMN device has a simple structure and low energy consumption as it does not require precise piezoelectric layer design or stringent voltage clocking requirements. The energy consumption per switching is only 7.3 aJ. These findings provide significant guidance for the design of nanomagnetic logic and memory devices and lay a strong foundation for the application of strain-mediated magnetization switching technology.