Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

Lili Zhang; Yuxuan Liu; Junpeng Fang; Yanjuan Liu

doi:10.3390/mi13101770

Micromachines (Oct 2022)

Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

Lili Zhang,
Yuxuan Liu,
Junpeng Fang,
Yanjuan Liu

Affiliations

Lili Zhang: College of Electronic and Information Engineering, Shenyang Aerospace University, Shenyang 110136, China
Yuxuan Liu: College of Electronic and Information Engineering, Shenyang Aerospace University, Shenyang 110136, China
Junpeng Fang: School of Integrated Circuits, Tsinghua University, Beijing 100084, China
Yanjuan Liu: College of Electronic and Information Engineering, Shenyang Aerospace University, Shenyang 110136, China

DOI: https://doi.org/10.3390/mi13101770
Journal volume & issue: Vol. 13, no. 10
p. 1770

Abstract

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In this paper, a 4H-SiC trench gate MOSFET, featuring a super junction layer located on the drain-region side, is presented to enhance the breakdown voltage and the figures of merit (FOM). The proposed structure is investigated and compared with the conventional structure with a 2D numerical simulator—ATLAS. The investigation results have demonstrated that the breakdown voltage in the proposed structure is enhanced by 21.2%, and the FOM is improved by 39.6%. In addition, the proposed structure has an increased short-circuit capability.

Published in Micromachines

ISSN: 2072-666X (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Mechanical engineering and machinery
Website: https://www.mdpi.com/journal/micromachines

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