Nature Communications (Mar 2016)

Mobility overestimation due to gated contacts in organic field-effect transistors

  • Emily G. Bittle,
  • James I. Basham,
  • Thomas N. Jackson,
  • Oana D. Jurchescu,
  • David J. Gundlach

DOI
https://doi.org/10.1038/ncomms10908
Journal volume & issue
Vol. 7, no. 1
pp. 1 – 7

Abstract

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Charge mobility, extracted from current–voltage curves, is an important parameter for evaluating the performance of organic field-effect transistors. Bittle et al. show that charge mobility can be overestimated by one order of magnitude due to the gate bias dependence of the charge injection process.