Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

Abstract

The studies of the laser operated third order nonlinear optical features of novel TlGaSn2Se6 crystal were done. The main efforts were devoted to a search of a possibility to apply these crystals as laser operated optoelectronic material. For this reason, the third harmonic generation of the Nd:YAG pulse laser 1064 nm as the fundamental beam with varied energy density of up to 200 J/m2 was studied. As a source of laser operated light, we have used the cw laser (532 nm), exciting the material above the energy gap. Additionally, the influence of middle-energy Ar+ ions on the XPS spectra of the TlInSn2Se6 surface has been explored. We have shown that the main contribution of the Se4p states is manifested in the upper part of the valence band of TlInSn2Se6 We have established that for the TlGaSn2Se6 crystal there exists a possibility of variation of the third harmonic generation efficiency using illumination by external continuous wave laser beam. The discovered effect makes it possible to utilize TlGaSn2Se6 crystal in advanced optoelectronic laser operated devices.

Keywords

• chalcogenides
• crystal structure
• electronic structure
• XPS
• nonlinear optics
• photoinduced effects