Near-infrared light emission from aluminum-doped tantalum-oxide thin films prepared using a simple co-sputtering method

Abstract

We fabricated aluminum-doped tantalum-oxide (Ta2O5:Al) thin films using a simple co-sputtering method and observed broad near-infrared (NIR) light emission with wavelengths around 700 to 1000 nm from a sample annealed at 900 °C without rare-earth elements. The NIR light emission is thought to be due to the superposition of three emission peaks around wavelengths of 800, 870, and 950 nm, and X-ray diffraction analyses revealed that the origin of the NIR light emission is related to AlTaO4 present in the Ta2O5:Al thin film.

Keywords

• Tantalum oxide
• Aluminum
• Thin film
• Near-infrared light emission
• Co-sputtering