Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifier
Sunwoo Heo,
Min Gyu Kwon,
Ho-In Lee,
Cihyun Kim,
Seung Mo Kim,
Kyoung Eun Chang,
Yongsu Lee,
Byoung Hun Lee
Affiliations
Sunwoo Heo
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Min Gyu Kwon
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Ho-In Lee
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Cihyun Kim
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Seung Mo Kim
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Kyoung Eun Chang
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Yongsu Lee
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Byoung Hun Lee
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
Tunable DC voltage control circuit based on a half-wave rectifier was developed using a graphene–germanium barristor. The output DC voltage level could be modulated at 30–100% of the peak voltage by controlling the Schottky barrier height between graphene and germanium using a gate bias. Owing to the simple and low-temperature integration process, this device can be used for a variable DC power supply in monolithically integrated circuits or flexible devices.
