Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application

Abstract

We present a single-photon sensor based on the single-photon avalanche diode (SPAD) that is suitable for low-cost and low-voltage light detection and ranging (LiDAR) applications. It is implemented in a zero-change standard 0.18-μm complementary metal oxide semiconductor process at the minimum cost by excluding any additional processing step for customized doping profiles. The SPAD is based on circular shaped P+/N-well junction of 8-μm diameter, and it achieves low breakdown voltage below 10 V so that the operation voltage of the single-photon sensor can be minimized. The quenching and reset circuit is integrated monolithically to capture photon-generated output pulses for measurement. A complete characterization of our single-photon sensor is provided.

Keywords

• single photon avalanche diode
• monolithic integration
• zero-change standard CMOS technology