Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems
Zaoxia Wen,
Xingyu Liu,
Wenxiu Chen,
Ruolin Zhou,
Hao Wu,
Yongmei Xia,
Lianbin Wu
Affiliations
Zaoxia Wen
College of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China
Xingyu Liu
College of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China
Wenxiu Chen
College of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China
Ruolin Zhou
College of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China
Hao Wu
College of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China
Yongmei Xia
College of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China
Lianbin Wu
College of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China
This paper offers a comprehensive overview of the polyhedral oligomeric silsesquioxane (POSS) and POSS-based composites within the realm of photoresist resin. The study involves a systematic exploration and discussion of the contributions made by POSS across various lithographic systems, with specific emphasis on critical parameters such as film formation, sensitivity, resolution, solubility, and edge roughness. These lithographic systems encompass X-ray lithography (XRL), deep ultraviolet nanoimprint lithography (DUV-NIL), extreme ultraviolet lithography (EUV), and guided self-assembled lithography (DSA). The principal objective of this paper is to furnish valuable insights into the development and utilization of POSS-based photoresist materials in diverse lithographic contexts.
