Carrier Modulation via Tunnel Oxide Passivating at Buried Perovskite Interface for Stable Carbon-Based Solar Cells
Yuqing Xiao,
Huijie Zhang,
Yue Zhao,
Pei Liu,
Kiran Kumar Kondamareddy,
Changlei Wang
Affiliations
Yuqing Xiao
School of Automation, Zhongkai University of Agriculture and Engineering, Guangzhou 510225, China
Huijie Zhang
Key Laboratory of Artificial Micro & Nano Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
Yue Zhao
Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Laboratory of Modern Optical Technologies of Education Ministry of China, School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
Pei Liu
Key Laboratory of Artificial Micro & Nano Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
Kiran Kumar Kondamareddy
Department of Physics, School of Pure Sciences, College of Engineering Science and Technology, FIJI National University, Lautoka Campus, Suva 744101, Fiji
Changlei Wang
Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Laboratory of Modern Optical Technologies of Education Ministry of China, School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
Carbon-based perovskite solar cells (C-PSCs) have the impressive characteristics of good stability and potential commercialization. The insulating layers play crucial roles in charge modulation at the buried perovskite interface in mesoporous C-PSCs. In this work, the effects of three different tunnel oxide layers on the performance of air-processed C-PSCs are scrutinized to unveil the passivating quality. Devices with ZrO2-passivated TiO2 electron contacts exhibit higher power conversion efficiencies (PCEs) than their Al2O3 and SiO2 counterparts. The porous feature and robust chemical properties of ZrO2 ensure the high quality of the perovskite absorber, thus ensuring the high repeatability of our devices. An efficiency level of 14.96% puts our device among the state-of-the-art hole-conductor-free C-PSCs, and our unencapsulated device maintains 88.9% of its initial performance after 11,520 h (480 days) of ambient storage. These results demonstrate that the function of tunnel oxides at the perovskite/electron contact interface is important to manipulate the charge transfer dynamics that critically affect the performance and stability of C-PSCs.
