Investigation of localized and delocalized excitons in ZnO/ZnS core-shell heterostructured nanowires
Li Ruxue,
Wei Zhipeng,
Zhao Fenghuan,
Gao Xian,
Fang Xuan,
Li Yongfeng,
Wang Xinwei,
Tang Jilong,
Fang Dan,
Wang Haizhu,
Chen Rui,
Wang Xiaohua
Affiliations
Li Ruxue
State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
Wei Zhipeng
State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
Zhao Fenghuan
Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055, P. R. China
Gao Xian
State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
Fang Xuan
State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
Li Yongfeng
Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, P. R. China
Wang Xinwei
State Key Laboratory of High Power Semiconductor Lasers, School of Materials Science and Engineering, 7089 Wei-Xing Road, Changchun 130022, P. R. China
Tang Jilong
State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
Fang Dan
State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
Wang Haizhu
State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
Chen Rui
Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055, P. R. China
Wang Xiaohua
State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
The localized states in ZnO nanowires (NWs) through the growth of ZnS shell have been introduced in this paper. Morphology and optical properties of the ZnO/ZnS core-shell heterostructured NWs after different rapid thermal annealing (RTA) treatments are investigated. Transmission electron microscopy measurements show the gradual disappearing of the jagged boundary between ZnO and ZnS with the increase of RTA temperature, while a decrease of interfacial composition fluctuation and a formation of ZnOS phase can be found after a RTA treatment of 300°C. Temperature-dependent photoluminescence exhibits the features of “S-shape” peak positions and a “valley shape” for the emission width, implying the existence of localized excitons in the core-shell NWs. Moreover, it is noted that the RTA treatments can lower the localized degree which is confirmed by optical measurement. The results indicate that the optical behavior of excitons in ZnO/ZnS core-shell heterostructured NWs can be manipulated by appropriate thermal treatments, which is very important for their practical device applications.
