Tunable Dual-Wavelength Self-injection Locked InGaN/GaN Green Laser Diode

Abstract

We implemented a tunable dual-longitudinal-mode spacing InGaN/GaN green (521-528 nm) laser diode by employing a self-injection locking scheme that is based on an external cavity configuration and utilizing either a high or partial-reflecting mirror. A tunable longitudinal-mode spacing of 0.20 - 5.96 nm was accomplished, corresponding to a calculated frequency difference of 0.22-6.51 THz, as a result. The influence of operating current and temperature on the system performance was also investigated with a measured maximum side-mode-suppression ratio of 30.4 dB and minimum dual-mode peak optical power ratio of 0.03 dB. To shed light on the operation of the dual-wavelength device arising from the tunable longitudinal-mode spacing mechanism, the underlying physics is qualitatively described. To the best of our knowledge, this tunable longitudinal-mode-spacing dual-wavelength device is novel, and has potential applications as an alternative means in millimeter wave and THz generation, thus possibly addressing the terahertz technology gap. The dual-wavelength operation is also attractive for high-resolution imaging and broadband wireless communication.

Keywords

• Dual wavelength lasers
• optical injection locking
• semiconductor lasers
• InGaN/GaN visible lasers