Nature Communications (Dec 2017)

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

  • Tiefeng Yang,
  • Biyuan Zheng,
  • Zhen Wang,
  • Tao Xu,
  • Chen Pan,
  • Juan Zou,
  • Xuehong Zhang,
  • Zhaoyang Qi,
  • Hongjun Liu,
  • Yexin Feng,
  • Weida Hu,
  • Feng Miao,
  • Litao Sun,
  • Xiangfeng Duan,
  • Anlian Pan

DOI
https://doi.org/10.1038/s41467-017-02093-z
Journal volume & issue
Vol. 8, no. 1
pp. 1 – 9

Abstract

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Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.