Growth technology for ZnSe single crystals with low dislocation density

Abstract

The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals free from subgrain boundaries and twins are suggested. The etch pits are not observed in the basic volume (up to 4 сm ) of grown crystals. It is shown, that PL spectra of as-grown ZnSe crystals consist of the edge radiation only. The resistivity of ZnSe crystals annealed in a Zn melt is higher than 10 Ohm⋅cm, whereas the electrical conductivity of ZnSe:I crystals grown by chemical vapor transport and annealed in a Zn melt is 10 (Ohm⋅cm) at room temperature.