Dianzi Jishu Yingyong (May 2018)

The influence and protection of negative current in Latch-up test

  • Sun Junyue

DOI
https://doi.org/10.16157/j.issn.0258-7998.173893
Journal volume & issue
Vol. 44, no. 5
pp. 36 – 38

Abstract

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Described the generation theory of negative voltage and negative current in Latch-up test and the theory of chain reaction caused by inner parasitic bipolar transistor. Then analyzed the influence of negative current in chip level with examples of analog voltage buffer and LDO. Finally, proposed a series of action list of how to protect negative current in chip level.

Keywords