We report on the quantum interference transport of randomly distributed antidot arrays, which were prepared on gold films via the focused ion beam direct writing method. The temperature dependence of the gold films’ resistances with and without random antidot arrays were described via electron–phonon interaction theory. Compared with the pristine gold films, we observed an unexpected enhancement of the weak localization signature in the random antidot array films. The physical mechanism behind this enhancement may originate from the enhancement of electron–electron interactions or the suppression of electron–phonon interactions; further evidence is required to determine the exact mechanism.
