First integration of Ni barrier layer for enhanced threshold switching characteristics in Ag/HfO2-based TS device

Abstract

Utilizing Ag/HfO2 with nickel (Ni) as a barrier layer, a novel threshold switching (TS) device is devised to overcome challenges such as low reliability, high threshold voltage, and high leakage current. Compared against an Ag/Ti/HfO2-based TS device, the Ag/Ni/HfO2-based TS device exhibits improved electrical characteristics: yield enhancement from 31.7 % to 40.0 %, enhanced endurance from ∼10 cycles to ∼300 cycles, and suppression in off-state current (IOFF) from 1.2 × 10−7 A to 5.2 × 10−10 A under a high compliance current (e.g., 10−4 A). The results obtained through transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM) support the evidence of those accomplishments. Reducing the effective area of the TS device improves control over erratically generated filaments and the electric field within the switching layer, resulting in enhanced performance such as a reduced threshold voltage (VTH ∼0.35 V), minimized VTH variability (∼0.01 V), decreased a threshold current (ITH, i.e., the leakage current in the off-state before activation, ∼5.2 × 10−10 A), and maximum conductance (∼5.0 × 10−5 S) of low-resistance state. These findings suggest that the optimized Ag/Ni/HfO2-based TS device can serve as a practical solution for low-power applications.

Keywords

• Threshold switching
• Ag/HfO2-based TS device
• Ni barrier layer
• Ag ions
• Oxygen vacancy
• Reducing the effective area