Observation of the Unidirectional Magnetoresistance in Antiferromagnetic Insulator Fe2O3/Pt Bilayers

Yihong Fan; Pengxiang Zhang; Jiahao Han; Yang Lv; Luqiao Liu; Jian‐Ping Wang

doi:10.1002/aelm.202300232

Advanced Electronic Materials (Aug 2023)

Observation of the Unidirectional Magnetoresistance in Antiferromagnetic Insulator Fe2O3/Pt Bilayers

Yihong Fan,
Pengxiang Zhang,
Jiahao Han,
Yang Lv,
Luqiao Liu,
Jian‐Ping Wang

Affiliations

Yihong Fan: Department of Electrical and Computer Engineering University of Minnesota 200 Union St. SE Minneapolis Minnesota 55455 USA
Pengxiang Zhang: Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Ave. Room 38–401 Cambridge MA 02139 USA
Jiahao Han: Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Ave. Room 38–401 Cambridge MA 02139 USA
Yang Lv: Department of Electrical and Computer Engineering University of Minnesota 200 Union St. SE Minneapolis Minnesota 55455 USA
Luqiao Liu: Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Ave. Room 38–401 Cambridge MA 02139 USA
Jian‐Ping Wang: Department of Electrical and Computer Engineering University of Minnesota 200 Union St. SE Minneapolis Minnesota 55455 USA

DOI: https://doi.org/10.1002/aelm.202300232
Journal volume & issue: Vol. 9, no. 8
pp. n/a – n/a

Abstract

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Abstract Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, UMR in antiferromagnetic insulator Fe2O3/Pt structure is reported. The UMR has a negative value, which is related to interfacial Rashba coupling and band splitting. Thickness‐dependent measurement reveals a potential competition between UMR and the unidirectional spin Hall magnetoresistance (USMR). This work reveals the existence of UMR in antiferromagnetic insulators/heavy metal bilayers and broadens the way for the application of antiferromagnet‐based spintronic devices.

Published in Advanced Electronic Materials

ISSN: 2199-160X (Online)
Publisher: Wiley-VCH
Country of publisher: Germany
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks; Science: Physics
Website: https://onlinelibrary.wiley.com/journal/2199160x

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